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Angstrom Advanced sets the standard in Ellipsometry-bringing the best in ellipsometry technology at the most affordable prices.Angstrom Advanced offers full range of ellipsometers for thin film thickness measurements, optical characterization for refractive index and extinction coefficient analysis (n & k). Angstrom Advanced Inc ellipsometry can be used for many different applications and are used in some of the most prestigious laboratories such as MIT, NASA, UC Berkeley, Yale University, Duke University, NIST and many more.
The PHE101 is the latest discrete wavelength ellipsometer with many new features, such as material library, wide variable angle, a second laser for alignment and a powerful software making the PHE101 Ellipsometer with high accuracy and repetition.
PHE101 ellipsometer is an ideal discrete wavelength ellipsometer designed for measuring the refractive index, extinction coefficient(n & k) and thickness of single and multi-layer films. The PHE101 ellipsometer takes quick and accurate readings due to its precision optical analyzer/detector and its stable mechanical design. The PHE101 ellipsometer is supplied complete with an integrated Windows software package, which further enhances the speed and ease of operating the instrument.
PHE101 has the widest variable angle (10-90°) which is adjustable in steps of 5°, with an accuracy of 0.01°. (As an option, the angle of incidence can be varied continuously.)
The standard wavelength of PHE101 ellipsometer is HeNe laser at 632.8nm. However, The wavelength can be selected from 543nm, 594nm, 612nm, 633nm to 1150nm etc. Infrared sources at 0.83, 1.31 and 1.52 mm are also available.
The PHE101 is very easy to use and can be fitted with our new laser alignment tool which greatly improves the ease of use and speed of operation when compared to conventional ellipsometers.
The PHE101 has a large sample stage and measurement speed is less than 1 sec.
Thickness range of transparent films | 0 - 6000 nm |
Thickness range of absorptive films | 0 - 6000 nm |
Range of angle of incidence | 10 - 90° |
Reflection angle steps | 5° ± 0.01° |
Accuracy of refractive index measurement | 0.0001 |
Accuracy of film thickness measurement | ± 0.001 nm for SiO2 standard sample |
Stability | Long term ( months ) ± 0.01° in D |
Measurement time | less than 1 sec |
Sample stage | Wafer chuck up to 200 mm diameter |
Sample stage adjustments | Tilt and height |
Sample alignment | Second laser alignment with automatic correction unit |
Standard wavelength | 632.8 nm |
Optional wavelength | 543 nm, 594 nm, 612 nm, 633 nm and 1150 nm or by request |